Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE

نویسندگان

چکیده

In this study, we report the catalyst-free growth of n-type wurtzite InN, along with its optical properties and carrier dynamics different surface dimensionalities. The self-catalyzed epitaxial InN nanorods grown by metal–organic molecular-beam epitaxy on GaN/Al2O3(0001) substrates has been demonstrated. substrate temperature is dominant in controlling nanorods. A dramatic morphological change from 2D-like to 1D occurs decreasing temperature. have a low dislocation density good crystalline quality, compared films. terms properties, nanorod structure exhibits strong recombination Mahan excitons luminescence, an obvious spatial correlation effect phonon dispersion. downward band at leads photon energy-dependent lifetime being upshifted high-energy side.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE

This paper reports on high-quality InN materials prepared on a GaN template using radio-frequency metalorganic molecular beam epitaxy. We also discuss the structural and electro-optical properties of InN nanorods/films. The X-ray diffraction peaks of InN(0002) and InN(0004) were identified from their spectra, indicating that the (0001)-oriented hexagonal InN was epitaxially grown on the GaN tem...

متن کامل

Transport measurements on MOVPE-grown InN films

Pen-Hsiu Chang , N.C. Chen, Chin-An Chang1, Hsian-Chu Peng, Chuang-Feng Shih, KuoShung Liu, Shih-Kai Lin, Kun-Ta Wu, Shang-Chia Chen, Chao-Ping Huang, Hong-Syuan Wang, Pu-Tai Yang, C.-T. Liang, Y.H. Chang and Y.F. Chen Institute of Electro-Optical Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan 333, Taiwan Department of Materials Science and Engineering, National Tsing Hua University, H...

متن کامل

Ultrafast carrier dynamics in InN epilayers

Ultrafast differential transmission measurements on a series of InN epilayers, grown by molecular beam epitaxy, have been employed to determine the carrier lifetimes and to probe the carrier recombination dynamics at room temperature. Differential transmission spectra reveal a peak energy of B0.7 eV on these samples, supporting the existence of the narrow band gap of InN. In addition, we observ...

متن کامل

Ultrafast Carrier Relaxation in InN Nanowires Grown by Reactive Vapor Transport

We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated carriers near and above the optical absorption edge of InN NWs where an interplay of state filling, photoinduced absorption, and band-gap renormalization have been observed. The...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Catalysts

سال: 2021

ISSN: ['2073-4344']

DOI: https://doi.org/10.3390/catal11080886